TRS. OF BOSTON UNIV. v. EVERLIGHT ELECS. CO., decided July 25, 2018

U.S. Patent No. 5,686,738, directed to LED creation with monocrystalline GaN films.  Claim interpretation of “non-single crystalline buffer layer” is poly, amorphous, or both layer, not a monocrystalline layer (pages 5-6).  A growth layer is “grown on” the buffer layer directly or indirectly, allowing for various combinations including growing a monocrystalline layer directly on an […]